BASIC ELECTRONICS ENGINEERING (UTU QUESTION PAPER - 2022)

BASIC ELECTRONICS ENGINEERING (UTU QUESTION PAPER - 2022) - B.TECH FIRST YEAR

Q 1.  Attempt nny four parts of the following (5 x 4 = 20)

(a) On the basis of energy band gap theory.cxplain the formantion of valance band in solid silicon . Classify solids on the basis of energy band theory.

(b) Exlain the formation of extrinsic semiconducror.Compare N type and P type SC.

(cl  Expbin 1hc fonnation of depletion region in a PN junction diode.

(d) E'\'J'lain  the  V-1 characteris1ics of  p-n  junct ion  Diode. Explain  the  effect  of  temperature  on  V-1 charactcrisrics of :i diode.

(c)    Vrite sho11nore on: i) Zener bre:ikdown  i i) Avalanche breakdu wu

Q 2. Attempt any four parts of the following (5 x 4 = 20)

(a) What are Rectifiers? Explain rhc construction and operation of a full wave bridge rect ifier.

(b) Derh•c rhc efficiency of half wave and  full wave rectifier and  proof that the ctlicicney of full  wave rectifier is r wice as rhat ofa half wavc rcc1ificr.

(c) \\'hat are ripples? Explain how a shunt capaciti\'e filler is u lilized to remove the ripples presen t in rhe output of a rectifier.

(d) E:..plain po it ivc and negati\'C clippers wirh proper circuit and input-output waveform .

(c)  For the cirtuit   hown. find the maximum and minimu m va lues of Zener diode current.

Q 3. Attempt any two parts of the following (10 x 2 = 20)

(:1) Expl.lin \\ Orl..in :rntl conslruclion of :I rur with proper diagram. Expl:1i 11 :iclivc. cu t olT:ind salnrnti,,n r •g.i,rn of operation.

(b) 1:,pl:ti n wltagc di,•idcr hi:is of a nJT :rnd dciivc the CXpl'l:ssion for le. Vn :111d st:1hili1y foctl)I'

(c) E;1.plai11 co111111on b:isc config11r:1tion of :i llJT. Draw ifp :rnd o/p ch:irnctcristics of t he snmc.

Q4. Attempt any t:\vo parts orthe following: (10 x 2 = 20)

(n) Expl:lin the worl..ing nnd construction of 11-cha11ncl JFET with proper drain nnd t ransfer charnctcristics.

(b) fapl:lin the \\ Orking :ind conslnrction of n-channel E-MOSFET "ith proper dr:1in :ind trnnsfc:r ch:1ractcristics.

(c) faplain fixed-bias and self-bias circu its of ff ET.

Q5.  Attempt-any two parts of the following: (10 x 2 = 20)

(::t ) Explain the following parameters for an Op-Amp:

1. Input Offset Voh:ige

11.  Inpu t OITo;ct Current

iii. PSRR

iv. CMRR

v. Slew Rate

(b) Design integrator an, difTcrcmintor using Op-Amp 1111d derived the cxpressio11 for output voltage for both.

(c) Explain in closed loop inverting amplifier configuration. Derive the expression for close loop Gain.